LTC4225-1/LTC4225-2
6
422512f
HGATE Pull-Up Current
vs Temperature
TMR Pull-Up Current
vs Temperature
PWRGD, FAULT Output Low
Voltage vs Current
Typical perForMance characTerisTics T
A
= 25癈, V
IN
= 12V, unless otherwise noted.
pin FuncTions
CPO1, CPO2: Charge Pump Output. Connect a capacitor
from CPO1 or CPO2 to the corresponding IN1 or IN2 pin.
The value of this capacitor is approximately 10?the gate
capacitance (C
ISS
) of the external MOSFET for ideal diode
control. The charge stored on this capacitor is used to pull
up the gate during a fast turn-on. Leave this pin open if
fast turn-on is not needed.
DGATE1, DGATE2: Ideal Diode MOSFET Gate Drive Out-
put. Connect this pin to the gate of an external N-channel
MOSFET for ideal diode control. An internal clamp limits
the gate voltage to 12V above and a diode voltage below
IN. During fast turn-on, a 1.5A pull-up charges DGATE from
CPO. During fast turn-off, a 1.5A pull-down discharges
DGATE to IN.
EN1, EN2: Enable Input. Ground this pin to enable Hot
Swap control. If this pin is pulled high, the MOSFET is not
allowed to turn on. A 10礎 current source pulls this pin
up to a diode below INTV
CC
. Upon EN going low when ON
is high, an internal timer provides a 100ms start-up delay
for debounce, after which the fault is cleared.
Exposed Pad (UFD Package): The exposed pad may be
left open or connected to device ground.
FAULT1, FAULT2: Fault Status Output. Open-drain output
that is normally pulled high by a 10礎 current source to a
diode below INTV
CC
. It may be pulled above INTV
CC
using
an external pull-up. It pulls low when the circuit breaker
is tripped after an overcurrent fault timeout. Leave open
if unused.
GND: Device Ground.
HGATE1, HGATE2: Hot Swap MOSFET Gate Drive Output.
Connect this pin to the gate of the external N-channel
MOSFET for Hot Swap control. An internal 10礎 current
source charges the MOSFET gate. An internal clamp limits
the gate voltage to 12V above and a diode below OUT .
During turn-off, a 300礎 pull-down discharges HGATE to
ground. During an output short or INTV
CC
undervoltage
lockout, a fast 200mA pull-down discharges HGATE to OUT .
IN1, IN2: Positive Supply Input and MOSFET Gate Drive
Return. The 5V INTV
CC
supply is generated from IN1 and
IN2 via an internal diode-OR. The voltage sensed at this
pin is used to control DGATE for forward voltage regulation
and reverse turn-off. It also senses the positive side of
the current sense resistor. The gate fast pull-down current
returns through this pin when DGATE is discharged.
TEMPERATURE (癈)
50
9.0
9.5
10.0
10.5
11.0
25
0
25
50
422512 G10
75 100
TEMPERATURE (癈)
50
97
98
99
100
101
103
25
0
25
50
422512 G11
75 100
102
CURRENT (mA)
0
0.4
0.6
4
422512 G12
0.2
0
1
2
3
5
0.8
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